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IXFK27N80Q N Channel Mosfet Transistor 800V 27A 0.32 Rds Power MOSFETs HiPerFET

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IXFK27N80Q N Channel Mosfet Transistor 800V 27A 0.32 Rds Power MOSFETs HiPerFET

Name: IXFK27N80Q N Channel Mosfet Transistor 800V 27A 032 Rds Power MOSFETs HiPerFET
Brand: IXYS
Price: 1 USD

China IXFK27N80Q N Channel Mosfet Transistor 800V 27A 0.32 Rds Power MOSFETs HiPerFET wholesale

Brand Name : IXYS

Model Number : IXFK27N80Q

Place of Origin : Original Factory

MOQ : 2pcs

Price : Negotiate

Payment Terms : T/T, Western Union, MoneyGram, PayPay

Supply Ability : 5000pcs Per Month

Delivery Time : 1-2work days

Packaging Details : 200Pcs

Type : MOSFET

Description : MOSFET 27 Amps 800V 0.32 Rds

Shipping by : DHL\UPS\Fedex

Lead time : 2-3Working days

Power - Max : 500W

Rise Time : 28 ns

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IXFK27N80Q N Channel Mosfet 800V 27A 0.32 Rds Power MOSFETs HiPerFET

Description

HiPerFETTM Power MOSFETs Q-CLASS

Single MOSFET Die

N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low trr

IXFK27N80Q N Channel Mosfet Transistor 800V 27A 0.32 Rds Power MOSFETs HiPerFET

Features

• IXYS advanced low Qg process

• Low gate charge and capacitances - easier to drive - faster switching

• International standard packages z Low RDS (on) z Rated for unclamped Inductive load

switching (UIS) rated

• Molding epoxies meet UL 94 V-0 flammability classification

Applications

• DC-DC converters z Battery chargers

• Switched-mode and resonant-mode power supplies

• DC choppers z AC motor control

• Temperature and lighting controls

Specifications

Product Attribute	Attribute Value
Product Category:	MOSFET
Technology:	Si
Mounting Style:	Through Hole
Package / Case:	TO-264-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	800 V
Id - Continuous Drain Current:	27 A
Rds On - Drain-Source Resistance:	320 mOhms
Vgs - Gate-Source Voltage:	- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage:	4.5 V
Qg - Gate Charge:	170 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	500 W
Channel Mode:	Enhancement
Packaging:	Tube
Brand:	IXYS
Configuration:	Single
Fall Time:	13 ns
Forward Transconductance - Min:	20 S
Height:	26.16 mm
Length:	19.96 mm
Product Type:	MOSFET

Shopping Guide

Shipping	Delivery period	For in-stock parts, orders are estimated to ship out in 3 days. Once shipped, estimated delivery time depends on the below carriers you chose: DHL Express, 3-7 business days. DHL eCommerce,12-22 business days. FedEx International Priority, 3-7 business days EMS, 10-15 business days. Registered Air Mail, 15-30 business days.
	Shipping rates	After confirming the order, we will evaluate the shipping cost based on the weight of the goods
	Shipping option	We provide DHL, FedEx, EMS, SF Express, and Registered Air Mail international shipping.
	Shipping tracking	We will notify you by email with tracking number once order is shipped.
Returning warranty	Returning	Returns are normally accepted when completed within 30 days from date of shipment.Parts should be unused and in original packaging.Customer has to take charge for the shipping.
Returning warranty	Warranty	All Retechip purchases come with a 30-day money-back return policy, This warranty shall not apply to any item where defects have been caused by improper customer assembly, failure by customer to follow instructions, product modification, negligent or improper operation
Ordering	Payment	T/T,PayPal, Credit Card includes Visa, Master, American Express.

Product Tags:

IXFK27N80Q N Channel Mosfet Transistor

N Channel Mosfet Transistor 800V

IXFK27N80Q igbt mosfet transistor

IXFK27N80Q N Channel Mosfet Transistor 800V 27A 0.32 Rds Power MOSFETs HiPerFET Images

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