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IXFH160N15T2 Mosfet Power Transistor 160A 150V 880W N Channel TrenchT2

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IXFH160N15T2 Mosfet Power Transistor 160A 150V 880W N Channel TrenchT2

Name: IXFH160N15T2 Mosfet Power Transistor 160A 150V 880W N Channel TrenchT2
Brand: IXYS
Price: 1 USD

China IXFH160N15T2 Mosfet Power Transistor 160A 150V 880W N Channel TrenchT2 wholesale

Brand Name : IXYS

Model Number : IXFH160N15T2

Place of Origin : Original Factory

MOQ : 10pcs

Price : Negotiate

Payment Terms : T/T, Western Union, MoneyGram, PayPay

Supply Ability : 9000pcs Per Month

Delivery Time : 1-2work days

Packaging Details : 450Pcs

Type : MOSFET

Description : MOSFET Trench T2 HiperFET Power MOSFET

Shipping by : DHL\UPS\Fedex

Lead time : 2-3Working days

Power - Max : 880W

Rise Time : 15 ns

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Mosfet Power Transistor IXFH160N15T2 160A 150V 880W N-Channel TrenchT2

Description

DC charging stations are designed to convert the electrical grid’s AC power into DC power that can

then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because

the conversion from AC to DC power is being done in the charging station, these units can provide

higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations.

Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system,

and user safety are critical.

IXFH160N15T2 Mosfet Power Transistor 160A 150V 880W N Channel TrenchT2

Features

• International Standard Package

• High Current Handling Capability

• Fast Intrinsic Diode z Dynamaic dv/dt Rated

•z Avalanche Rated z Low RDS(on)

Applications

• DC-DC Converters

• Battery Chargers

• Switch-Mode and Resonant-Mode Power Supplies

• DC Choppers z AC Motor Drives

• Uninterruptible Power Supplies

• High Speed Power Switching Applications

Specifications

Product Attribute	Attribute Value
Manufacturer:	IXYS
Product Category:	MOSFET
Technology:	Si
Mounting Style:	Through Hole
Package / Case:	TO-247-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	150 V
Id - Continuous Drain Current:	160 A
Rds On - Drain-Source Resistance:	9 mOhms
Vgs - Gate-Source Voltage:	- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage:	4.5 V
Qg - Gate Charge:	253 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	880 W
Channel Mode:	Enhancement
Packaging:	Tube
Brand:	IXYS
Configuration:	Single
Fall Time:	26 ns
Forward Transconductance - Min:	80 S

Shopping Guide

Shipping	Delivery period	For in-stock parts, orders are estimated to ship out in 3 days. Once shipped, estimated delivery time depends on the below carriers you chose: DHL Express, 3-7 business days. DHL eCommerce,12-22 business days. FedEx International Priority, 3-7 business days EMS, 10-15 business days. Registered Air Mail, 15-30 business days.
	Shipping rates	After confirming the order, we will evaluate the shipping cost based on the weight of the goods
	Shipping option	We provide DHL, FedEx, EMS, SF Express, and Registered Air Mail international shipping.
	Shipping tracking	We will notify you by email with tracking number once order is shipped.
Returning warranty	Returning	Returns are normally accepted when completed within 30 days from date of shipment.Parts should be unused and in original packaging.Customer has to take charge for the shipping.
Returning warranty	Warranty	All Retechip purchases come with a 30-day money-back return policy, This warranty shall not apply to any item where defects have been caused by improper customer assembly, failure by customer to follow instructions, product modification, negligent or improper operation
Ordering	Payment	T/T,PayPal, Credit Card includes Visa, Master, American Express.

Product Tags:

IXFH160N15T2 Mosfet Power Transistor

Mosfet Power Transistor 160A

n channel mosfet transistor 150V

IXFH160N15T2 Mosfet Power Transistor 160A 150V 880W N Channel TrenchT2 Images

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